The Memory Circuit Design Engineer will join the CPU Circuit Technology team at Intel, focusing on designing and developing high-performance memory technologies for CPUs and SOCs. This role involves working in a dynamic environment to innovate and optimize memory circuit designs, including SRAMs and caches. The engineer will collaborate with domain experts to deliver cutting-edge memory solutions while ensuring technical readiness and adherence to project schedules. This position offers the opportunity to shape the future of technology through advanced circuit design.

• Bachelor's degree with 8+ years of experience, or master's degree with 6+ years of experience, or PhD with 4+ years of experience in Electrical Engineering, Computer Engineering, Computer Science or a STEM-related field.
• 3+ years of experience in CMOS circuit design, digital logic optimizations, and circuit trade-offs for power, performance, and area.
• 3+ years of expertise in SRAM and Cache design.

• Design and develop full-custom and compiler-based SRAMs, ROMs, and custom memories.
• Conduct technical readiness, memory circuit design, characterization, and simulations.
• Perform cache design, critical path simulations, and design custom blocks.
• Engage in memory path-finding activities and optimize power, performance, and area.
• Design memory bit-cells and complex periphery ICs, including automation.
• Innovate in memory array/IP design and contribute to memory circuit innovations.
• Define methodologies and execute to project schedules.

• Intel offers a comprehensive benefits package including competitive pay, stock programs, healthcare coverage, retirement plans, paid time off, parental leave, and programs supporting employee wellbeing and professional development.