The Memory Circuit Design Engineer will join the CPU Circuit Technology team at Intel, focusing on designing and developing various memory technologies such as SRAMs, ROMs, and custom memories for Intel CPUs and SOCs. This role requires collaboration with domain experts to innovate and deliver high-quality memory technology solutions. The engineer will work in a dynamic environment, engaging in circuit design and optimization tasks to enhance performance and efficiency. The position emphasizes the development of low-power, high-density embedded memory designs using advanced CMOS technologies.

• Bachelor's degree with 8+ years of experience, or master's degree with 6+ years of experience, or PhD with 4+ years of experience in Electrical Engineering, Computer Engineering, Computer Science or a STEM-related field.
• 3+ years of experience in CMOS circuit design, digital logic optimizations, and circuit trade-offs for power, performance, and area.
• 3+ years of expertise in SRAM and Cache design.

• Design, develop, and build full-custom and compiler-based SRAMs, ROMs, and custom memories.
• Conduct technical readiness, memory circuit design, characterization, and simulations.
• Engage in cache design, critical path simulations, and design custom blocks.
• Perform memory path-finding activities and optimize power, performance, and area.
• Design memory bit-cells and complex periphery ICs, and automate processes.
• Innovate in memory array/IP design and contribute to memory circuit innovations.
• Define methodologies and execute project schedules.

• Intel offers a comprehensive benefits package including competitive pay, stock programs, healthcare coverage, retirement plans, paid time off, parental leave, and programs supporting employee wellbeing and professional development.